Graphene-Based One-Dimensional Terahertz Phononic Crystal: Band Structures and Surface Modes.

crystal graphene phonon resonant mode surface mode

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
05 Nov 2020
Historique:
received: 08 10 2020
revised: 01 11 2020
accepted: 02 11 2020
entrez: 10 11 2020
pubmed: 11 11 2020
medline: 11 11 2020
Statut: epublish

Résumé

In this paper, we provide a theoretical and numerical study of the acoustic properties of infinite and semi-infinite superlattices made out of graphene-semiconductor bilayers. In addition to the band structure, we emphasize the existence and behavior of localized and resonant acoustic modes associated with the free surface of such structures. These modes are polarized in the sagittal plane, defined by the incident wavevector and the normal to the layers. The surface modes are obtained from the peaks of the density of states, either inside the bulk bands or inside the minigaps of the superlattice. In these structures, the two directions of vibrations (longitudinal and transverse) are coupled giving rise to two bulk bands associated with the two polarizations of the waves. The creation of the free surface of the superlattice induces true surface localized modes inside the terahertz acoustic forbidden gaps, but also pseudo-surface modes which appear as well-defined resonances inside the allowed bands of the superlattice. Despite the low thickness of the graphene layer, and though graphene is a gapless material, when it is inserted periodically in a semiconductor, it allows the opening of wide gaps for all values of the wave vector k// (parallel to the interfaces). Numerical illustrations of the band structures and surface modes are given for graphene-Si superlattices, and the surface layer can be either Si or graphene. These surface acoustic modes can be used to realize liquid or bio-sensors graphene-based phononic crystal operating in the THz frequency domain.

Identifiants

pubmed: 33167353
pii: nano10112205
doi: 10.3390/nano10112205
pmc: PMC7694383
pii:
doi:

Types de publication

Journal Article

Langues

eng

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Auteurs

Ilyasse Quotane (I)

Laboratoire de Physique de la Matière et de Rayonnement (LPMR), Département de Physique, Faculté des Sciences, Université Mohammed I, 60000 Oujda, Morocco.

El Houssaine El Boudouti (EH)

Laboratoire de Physique de la Matière et de Rayonnement (LPMR), Département de Physique, Faculté des Sciences, Université Mohammed I, 60000 Oujda, Morocco.

Bahram Djafari-Rouhani (B)

Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Département de Physique, Université de Lille, 59655 Villeneuve d'Ascq, France.

Classifications MeSH