Resolving Different Physical Origins toward Crystallite Imperfection in Semiconducting Polymers: Crystallite Size vs Paracrystallinity.
Journal
The journal of physical chemistry. B
ISSN: 1520-5207
Titre abrégé: J Phys Chem B
Pays: United States
ID NLM: 101157530
Informations de publication
Date de publication:
19 Nov 2020
19 Nov 2020
Historique:
pubmed:
11
11
2020
medline:
11
11
2020
entrez:
10
11
2020
Statut:
ppublish
Résumé
The crystallization and aggregation behaviors of semiconducting polymers play a critical role in determining the ultimate performance of optoelectronic devices based on these materials. Due to the soft nature of polymers, crystallite imperfection exists ubiquitously. To this aspect, crystallinity is often used to represent the degree of crystallite imperfection in a reciprocal relation. Despite of the importance, the discussion on crystallinity is still on the phenomenological level and ambiguous in many cases. As two major contributors to crystallite imperfection, crystallite size and paracrystallinity are highly intertwined and hardly separated, hindering more accurate and trustworthy structural analysis. Herein, with the aid of synchrotron-based X-ray diffraction, combined with environmentally controlled heating capability, the evolution of crystallite size and paracrystallinity of two prototypical polythiophene-based thin films have been successfully measured. Strikingly, the paracrystallinity of poly(3-hexylthiophene-2,5-diyl) (P3HT) crystallites remains unchanged with annealing, while the paracrystallinity of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-
Identifiants
pubmed: 33169995
doi: 10.1021/acs.jpcb.0c06763
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM