Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope.
SOI pixel detector
detective quantum efficiency
modulation transfer function
transmission electron microscopy
Journal
Microscopy (Oxford, England)
ISSN: 2050-5701
Titre abrégé: Microscopy (Oxf)
Pays: England
ID NLM: 101595834
Informations de publication
Date de publication:
06 Jun 2021
06 Jun 2021
Historique:
received:
06
10
2020
revised:
09
11
2020
accepted:
11
11
2020
pubmed:
13
11
2020
medline:
13
11
2020
entrez:
12
11
2020
Statut:
ppublish
Résumé
The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.
Identifiants
pubmed: 33180139
pii: 5977574
doi: 10.1093/jmicro/dfaa072
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
321-325Informations de copyright
© The Author(s) 2020. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.