Growth Kinetics and Atomistic Mechanisms of Native Oxidation of ZrS

Kinetics Native oxidation Reactive molecular dynamics simulations ReaxFF reactive force field Spectroscopic ellipsometry Transition metal dichalcogenides

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
09 Dec 2020
Historique:
pubmed: 13 11 2020
medline: 13 11 2020
entrez: 12 11 2020
Statut: ppublish

Résumé

A thorough understanding of native oxides is essential for designing semiconductor devices. Here, we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS

Identifiants

pubmed: 33180506
doi: 10.1021/acs.nanolett.0c03263
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

8592-8599

Auteurs

Seong Soon Jo (SS)

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Akshay Singh (A)

Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India.

Liqiu Yang (L)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

Subodh C Tiwari (SC)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

Sungwook Hong (S)

Department of Physics and Engineering, California State University, Bakersfield, Bakersfield, California 93311, United States.

Aravind Krishnamoorthy (A)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

Maria Gabriela Sales (MG)

Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

Sean M Oliver (SM)

Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States.
Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States.

Joshua Fox (J)

Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Randal L Cavalero (RL)

Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States.

David W Snyder (DW)

Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Patrick M Vora (PM)

Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States.
Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States.

Stephen J McDonnell (SJ)

Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

Priya Vashishta (P)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

Rajiv K Kalia (RK)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

Aiichiro Nakano (A)

Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States.

R Jaramillo (R)

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Classifications MeSH