Photophysics and Electronic Structure of Lateral Graphene/MoS

ARPES Schottky barrier first-principles calculations graphene contacts heterostructure molybdenum disulfide photocurrent

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
22 Dec 2020
Historique:
pubmed: 17 11 2020
medline: 17 11 2020
entrez: 16 11 2020
Statut: ppublish

Résumé

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS

Identifiants

DOI: 10.1021/acsnano.0c02527 PMID: 33196167
pubmed: 33196167
doi: 10.1021/acsnano.0c02527
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

16663-16671

Auteurs

Shruti Subramanian (S)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
ORCID: 0000-0002-8933-9486

Quinn T Campbell (QT)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
ORCID: 0000-0003-1377-3769

Simon K Moser (SK)

Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074 Würzburg, Germany.

Jonas Kiemle (J)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Philipp Zimmermann (P)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Paul Seifert (P)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain.
ORCID: 0000-0002-4781-7099

Florian Sigger (F)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Deeksha Sharma (D)

Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Hala Al-Sadeg (H)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Michael Labella (M)

Nanofabrication Facility, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Dacen Waters (D)

Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
ORCID: 0000-0003-3588-0039

Randall M Feenstra (RM)

Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
ORCID: 0000-0001-7120-5685

Roland J Koch (RJ)

Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
ORCID: 0000-0001-5748-8463

Chris Jozwiak (C)

Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
ORCID: 0000-0002-0980-3753

Aaron Bostwick (A)

Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

Eli Rotenberg (E)

Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
ORCID: 0000-0002-3979-8844

Ismaila Dabo (I)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
ORCID: 0000-0003-0742-030X

Alexander W Holleitner (AW)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
ORCID: 0000-0002-8314-4397

Thomas E Beechem (TE)

Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.

Ursula Wurstbauer (U)

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
Institute of Physics, University of Munster, 48149 Münster, Germany.

Joshua A Robinson (JA)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Classifications MeSH