Field-assisted growth of one-dimensional ZnO nanostructures with high defect density.


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
26 Feb 2021
Historique:
pubmed: 18 11 2020
medline: 18 11 2020
entrez: 17 11 2020
Statut: ppublish

Résumé

One-dimensional ZnO nanostructures have shown great potential in electronics, optoelectronics and electromechanical devices owing to their unique physical and chemical properties. Most of these nanostructures were grown by equilibrium processes where the defects density is controlled by thermodynamic equilibrium. In this work, flash sintering, a non-equilibrium field-assisted processing method, has been used to synthesize ZnO nanostructures. By applying a high electric field and limiting a low current flow, ZnO nanorods grew uniformly by a vapor-liquid-solid mechanism due to the extreme temperatures achieved near the hot spot. High density basal stacking faults in the nanorods along with ultraviolet excitonic emission and a red emission under room temperature demonstrate the potential of defect engineering in nanostructures via the field-assisted growth method.

Identifiants

pubmed: 33202392
doi: 10.1088/1361-6528/abcb2f
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

095603

Auteurs

Xin Li Phuah (XL)

School of Materials Engineering, Purdue University, West Lafayette, IN 47907, United States of America.

Classifications MeSH