Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes.

InGaN LED mechanical flexibility nanowire self-heating

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
16 Nov 2020
Historique:
received: 15 10 2020
revised: 10 11 2020
accepted: 12 11 2020
entrez: 19 11 2020
pubmed: 20 11 2020
medline: 20 11 2020
Statut: epublish

Résumé

We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal-organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polydimethylsiloxane (PDMS) matrix. Despite the poor thermal conductivity of the polymer, active nitride NWs effectively dissipate heat to the substrate. Therefore, the flexible LED mounted on a copper heat sink can operate under high injection without significant overheating, while the device mounted on a plastic holder showed a 25% higher temperature for the same injected current. The efficiency of the heat dissipation by nitride NWs was further confirmed with finite-element modeling of the temperature distribution in a NW/polymer composite membrane.

Identifiants

pubmed: 33207755
pii: nano10112271
doi: 10.3390/nano10112271
pmc: PMC7696961
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : European Research Council
ID : 639052
Pays : International
Organisme : H2020 Marie Skłodowska-Curie Actions
ID : 722176
Organisme : Indo-French Centre for the Promotion of Advanced Research
ID : 6008-1
Organisme : undefined <span style="color:gray;font-size:10px;">undefined</span>
ID : Labex Ganex ANR-11-LABX-0014

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Auteurs

Nan Guan (N)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Nuño Amador-Mendez (N)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Arup Kunti (A)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Andrey Babichev (A)

ITMO University, 197101 Saint Petersburg, Russia.

Subrata Das (S)

Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala 695019, India.

Akanksha Kapoor (A)

Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France.

Noëlle Gogneau (N)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Joël Eymery (J)

Univ. Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France.

François Henri Julien (FH)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Christophe Durand (C)

Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France.

Maria Tchernycheva (M)

C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France.

Classifications MeSH