Graphene Capacitor-Based Electrical Switching of Mode-Locking in All-Fiberized Femtosecond Lasers.

electrical switching graphene Fermi level shift graphene capacitor mode-locking reversible pulse switching saturable absorber

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
02 Dec 2020
Historique:
medline: 20 11 2020
pubmed: 20 11 2020
entrez: 19 11 2020
Statut: ppublish

Résumé

Effective high-capacity data management necessitates the use of ultrafast fiber lasers with mode-locking-based femtosecond pulse generation. We suggest a simple but highly efficient structure of a graphene saturable absorber in the form of a graphene/poly(methyl methacrylate) (PMMA)/graphene capacitor and demonstrate the generation of ultrashort pulses by passive mode-locking in a fiber ring laser cavity, with simultaneous electrical switching (on/off) of the mode-locking operation. The voltage applied to the capacitor shifts the Fermi level of the graphene layers, thereby controlling their nonlinear light absorption, which is directly correlated with mode-locking. The flexible PMMA layer used for graphene transfer also acts as a dielectric layer to realize a very simple but effective capacitor structure. By employing the graphene capacitor on the polished surface of a D-shaped fiber, we demonstrate the switching of the mode-locking operation reversibly from the femtosecond pulse regime to a continuous wave regime of the ring laser with an extinction ratio of 70.4 dB.

Identifiants

pubmed: 33207879
doi: 10.1021/acsami.0c15479
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

54005-54011

Auteurs

Oleksiy Kovalchuk (O)

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
Department of Nano Material Science and Engineering, University of Science and Technology, Daejeon 34113, Republic of Korea.

Siam Uddin (S)

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
Department of Nano Material Science and Engineering, University of Science and Technology, Daejeon 34113, Republic of Korea.

Sungjae Lee (S)

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
Department of Nano Material Science and Engineering, University of Science and Technology, Daejeon 34113, Republic of Korea.

Yong-Won Song (YW)

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
Department of Nano Material Science and Engineering, University of Science and Technology, Daejeon 34113, Republic of Korea.

Classifications MeSH