Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
23 Nov 2020
23 Nov 2020
Historique:
received:
05
05
2020
accepted:
28
09
2020
entrez:
24
11
2020
pubmed:
25
11
2020
medline:
25
11
2020
Statut:
epublish
Résumé
Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO
Identifiants
pubmed: 33230157
doi: 10.1038/s41467-020-19217-7
pii: 10.1038/s41467-020-19217-7
pmc: PMC7683707
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
5923Subventions
Organisme : MEXT | JST | Core Research for Evolutional Science and Technology (CREST)
ID : JPMJCR1421
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