Influences on Plasmon Resonance Linewidth in Metal-Insulator-Metal Structures Obtained via Colloidal Self-Assembly.

FDTD LSPR MIM colloidal lithography linewidth narrowing self-assembly simulation discrepancy

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
16 Dec 2020
Historique:
pubmed: 2 12 2020
medline: 2 12 2020
entrez: 1 12 2020
Statut: ppublish

Résumé

Localized surface plasmon resonances (LSPRs) have been widely explored in various research fields because of their excellent ability to condense light into a nanometer scale volume. However, it suffers quite often from the broadening of the LSPR linewidths, resulting in low quality factors. Among the causes of the broadening, fabrication inaccuracies are crucial yet challenging to evaluate. In this paper, we designed a type of metal-insulator-metal structure as an example via the colloidal self-assembly approach. We then demonstrated a facile approach to identify the origin of the discrepancies in between spectra obtained from experiments and simulations. Through a series of simulations in accordance with the experimental results, we could confirm that the predominant influencing factors are the presence of defects, as well as feature size variations, though they impact the spectral response in different ways. For similar plasmonic systems, our results enabled a more cost-effective optimization process in lieu of rather intensive and iterative experimentations, which will pave the way to automated fabrication and optimization, as well as integrated design. Furthermore, our results also indicated that the typical defect ratio that is introduced via the colloidal self-assembly approach has only limited impact on the resulting plasmonic resonances, proving that for similar plasmonic structure designs, colloidal self-assembly methods can provide a reliable and efficient alternative in the field of nanofabrication of plasmonic systems.

Identifiants

pubmed: 33258589
doi: 10.1021/acsami.0c15829
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

56281-56289

Auteurs

Ye Yu (Y)

Institute of Semiconductor and Microsystems, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Daniel Schletz (D)

Institute of Physical Chemistry and Polymer Physics, Leibniz-Institut für Polymerforschung Dresden e.V., Hohe Straße 6, 01069 Dresden, Germany.

Johanna Reif (J)

Institute of Semiconductor and Microsystems, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Felix Winkler (F)

Institute of Semiconductor and Microsystems, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Matthias Albert (M)

Institute of Semiconductor and Microsystems, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Andreas Fery (A)

Institute of Physical Chemistry and Polymer Physics, Leibniz-Institut für Polymerforschung Dresden e.V., Hohe Straße 6, 01069 Dresden, Germany.
Cluster of Excellence Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany.
Department of Physical Chemistry of Polymeric Materials, Technische Universität Dresden, Hohe Straße 6, 01069 Dresden, Germany.

Robert Kirchner (R)

Institute of Semiconductor and Microsystems, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Classifications MeSH