Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve.
hybrid nanostructure
mathematical modeling
modified embedded-atom method
molecular dynamics
spin valve
spintronics
vacuum deposition
Journal
Beilstein journal of nanotechnology
ISSN: 2190-4286
Titre abrégé: Beilstein J Nanotechnol
Pays: Germany
ID NLM: 101551563
Informations de publication
Date de publication:
2020
2020
Historique:
received:
01
06
2020
accepted:
30
10
2020
entrez:
10
12
2020
pubmed:
11
12
2020
medline:
11
12
2020
Statut:
epublish
Résumé
This work is a study of the formation processes and the effect of related process parameters of multilayer nanosystems and devices for spintronics. The model system is a superconducting spin valve, which is a multilayer structure consisting of ferromagnetic cobalt nanolayers separated by niobium superconductor nanolayers. The aim was to study the influence of the main technological parameters including temperature, concentration and spatial distribution of deposited atoms over the nanosystem surface on the atomic structure and morphology of the nanosystem. The studies were carried out using the molecular dynamics method using the many-particle potential of the modified embedded-atom method. In the calculation process the temperature was controlled using the Nose-Hoover thermostat. The simulation of the atomic nanolayer formation was performed by alternating the directional deposition of different composition layers under high vacuum and stationary temperature conditions. The structure and thickness of the formed nanolayers and the distribution of elements at their interfaces were studied. The alternating layers of the formed nanosystem and their interfaces are shown to have significantly different atomic structures depending on the main parameters of the deposition process.
Identifiants
pubmed: 33299737
doi: 10.3762/bjnano.11.160
pmc: PMC7705863
doi:
Types de publication
Journal Article
Langues
eng
Pagination
1776-1788Informations de copyright
Copyright © 2020, Vakhrushev et al.; licensee Beilstein-Institut.
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