Misorientation-Controlled Cross-Plane Thermoelectricity in Twisted Bilayer Graphene.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
27 Nov 2020
Historique:
received: 17 09 2019
revised: 08 05 2020
accepted: 15 10 2020
entrez: 14 12 2020
pubmed: 15 12 2020
medline: 15 12 2020
Statut: ppublish

Résumé

The introduction of "twist" or relative rotation between two atomically thin van der Waals membranes gives rise to periodic moiré potential, leading to a substantial alteration of the band structure of the planar assembly. While most of the recent experiments primarily focus on the electronic-band hybridization by probing in-plane transport properties, here we report out-of-plane thermoelectric measurements across the van der Waals gap in twisted bilayer graphene, which exhibits an interplay of twist-dependent interlayer electronic and phononic hybridization. We show that at large twist angles, the thermopower is entirely driven by a novel phonon-drag effect at subnanometer scale, while the electronic component of the thermopower is recovered only when the misorientation between the layers is reduced to <6°. Our experiment shows that cross-plane thermoelectricity at low angles is exceptionally sensitive to the nature of band dispersion and may provide fundamental insights into the coherence of electronic states in twisted bilayer graphene.

Identifiants

pubmed: 33315457
doi: 10.1103/PhysRevLett.125.226802
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

226802

Auteurs

Phanibhusan S Mahapatra (PS)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Bhaskar Ghawri (B)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Manjari Garg (M)

Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India.

Shinjan Mandal (S)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

K Watanabe (K)

National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

T Taniguchi (T)

National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

Manish Jain (M)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Subroto Mukerjee (S)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Arindam Ghosh (A)

Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Classifications MeSH