Engineering a Robust Flat Band in III-V Semiconductor Heterostructures.
III−V semiconductor
Two-dimensional lattice
band engineering
block copolymer lithography
disorder
flat band
quantum well
scanning tunneling spectroscopy
tight binding calculations
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
13 Jan 2021
13 Jan 2021
Historique:
pubmed:
19
12
2020
medline:
19
12
2020
entrez:
18
12
2020
Statut:
ppublish
Résumé
Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In
Identifiants
pubmed: 33337891
doi: 10.1021/acs.nanolett.0c04268
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM