New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.
MOSFET
carrier mobility
condensation
epitaxy
relaxation
strained silicon
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
13 Jan 2021
13 Jan 2021
Historique:
pubmed:
29
12
2020
medline:
29
12
2020
entrez:
28
12
2020
Statut:
ppublish
Résumé
We report a novel approach for engineering tensely strained Si layers on a relaxed silicon germanium on insulator (SGOI) film using a combination of condensation, annealing, and epitaxy in conditions specifically chosen from elastic simulations. The study shows the remarkable role of the SiO
Identifiants
pubmed: 33356130
doi: 10.1021/acsami.0c16563
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM