Defect Engineering for Tuning the Photoresponse of Ceria-Based Solid Oxide Photoelectrochemical Cells.

defect chemistry engineering doped ceria solar-to-chemical energy conversion solid oxide photoelectrochemical cell thin films

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
13 Jan 2021
Historique:
pubmed: 30 12 2020
medline: 30 12 2020
entrez: 29 12 2020
Statut: ppublish

Résumé

Solid oxide photoelectrochemical cells (SOPECs) with inorganic ion-conducting electrolytes provide an alternative solution for light harvesting and conversion. Exploring potential photoelectrodes for SOPECs and understanding their operation mechanisms are crucial for continuously developing this technology. Here, ceria-based thin films were newly explored as photoelectrodes for SOPEC applications. It was found that the photoresponse of ceria-based thin films can be tuned both by Sm-doping-induced defects and by the heating temperature of SOPECs. The whole process was found to depend on the surface electrochemical redox reactions synergistically with the bulk photoelectric effect. Samarium doping level can selectively switch the open-circuit voltages polarity of SOPECs under illumination, thus shifting the potential of photoelectrodes and changing their photoresponse. The role of defect chemistry engineering in determining such a photoelectrochemical process was discussed. Transient absorption and X-ray photoemission spectroscopies, together with the state-of-the-art

Identifiants

pubmed: 33373206
doi: 10.1021/acsami.0c17921
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

541-551

Auteurs

Yanuo Shi (Y)

Electrochemical Thin Film Group, School of Physical Science and Technology, ShanghaiTech University, Shanghai, P.R. China.

Luyao Wang (L)

Electrochemical Thin Film Group, School of Physical Science and Technology, ShanghaiTech University, Shanghai, P.R. China.

Ziyu Wang (Z)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P.R. China.

Giovanni Vinai (G)

Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy.

Luca Braglia (L)

Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy.

Piero Torelli (P)

Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy.

Carmela Aruta (C)

CNR-SPIN, c/o Università di Roma Tor Vergata, Via del Politecnico, 1 Rome 00133, Italy.

Enrico Traversa (E)

School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, Sichuan 611731, P.R. China.

Weimin Liu (W)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P.R. China.

Nan Yang (N)

Electrochemical Thin Film Group, School of Physical Science and Technology, ShanghaiTech University, Shanghai, P.R. China.

Classifications MeSH