Understanding ambipolar transport in MoS
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
07 Jan 2021
07 Jan 2021
Historique:
entrez:
7
1
2021
pubmed:
8
1
2021
medline:
8
1
2021
Statut:
aheadofprint
Résumé
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS
Identifiants
pubmed: 33410418
doi: 10.1088/1361-6528/abd27a
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM