Understanding ambipolar transport in MoS


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
07 Jan 2021
Historique:
entrez: 7 1 2021
pubmed: 8 1 2021
medline: 8 1 2021
Statut: aheadofprint

Résumé

2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS

Identifiants

pubmed: 33410418
doi: 10.1088/1361-6528/abd27a
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

135202

Auteurs

Classifications MeSH