Electron-phonon interaction in In-induced structures on Si(111) from first-principles.


Journal

Physical chemistry chemical physics : PCCP
ISSN: 1463-9084
Titre abrégé: Phys Chem Chem Phys
Pays: England
ID NLM: 100888160

Informations de publication

Date de publication:
07 Apr 2021
Historique:
pubmed: 15 1 2021
medline: 15 1 2021
entrez: 14 1 2021
Statut: ppublish

Résumé

Electron-phonon interaction in the Si(111)-supported rectangular phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer structures, it is found that the phonon-induced scattering of electrons is almost exclusively determined by vibrations of In atoms. It is shown that the strength of electron-phonon coupling at the Fermi level λ(E

Identifiants

pubmed: 33443526
doi: 10.1039/d0cp05234e
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7955-7960

Auteurs

Irina Yu Sklyadneva (IY)

Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain.

Classifications MeSH