Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe
Raman scattering
photoluminescence excitation
reflectivity
transition metal dichalcogenides monolayer
van der Waals heterostructures
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
15 Jan 2021
15 Jan 2021
Historique:
received:
04
12
2020
revised:
10
01
2021
accepted:
11
01
2021
entrez:
20
1
2021
pubmed:
21
1
2021
medline:
21
1
2021
Statut:
epublish
Résumé
Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe
Identifiants
pubmed: 33467435
pii: ma14020399
doi: 10.3390/ma14020399
pmc: PMC7830124
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Narodowe Centrum Nauki
ID : 2016/23/G/ST3/04114
Organisme : Deutsche Forschungsgemeinschaft
ID : DE 2206/2-1
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