Anion Exchange Doping: Tuning Equilibrium to Increase Doping Efficiency in Semiconducting Polymers.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
04 Feb 2021
Historique:
pubmed: 27 1 2021
medline: 27 1 2021
entrez: 26 1 2021
Statut: ppublish

Résumé

High electron affinity (EA) molecules p-type dope low ionization energy (IE) polymers, resulting in an equilibrium doping level based on the energetic driving force (IE-EA), reorganization energy, and dopant concentration. Anion exchange doping (AED) is a process whereby the dopant anion is exchanged with a stable ion from an electrolyte. We show that the AED level can be predicted using an isotherm equilibrium model. The exchange of the dopant anion (FeCl

Identifiants

pubmed: 33497232
doi: 10.1021/acs.jpclett.0c03620
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1284-1289

Auteurs

Tucker L Murrey (TL)

Department of Material Science and Engineering, University of California, Davis, Davis, California 95616, United States.

Margaret A Riley (MA)

Department of Chemical Engineering, University of California, Davis, Davis, California 95616, United States.

Goktug Gonel (G)

Department of Chemical Engineering, University of California, Davis, Davis, California 95616, United States.

Dexter D Antonio (DD)

Department of Chemical Engineering, University of California, Davis, Davis, California 95616, United States.

Leah Filardi (L)

Department of Chemical Engineering, University of California, Davis, Davis, California 95616, United States.

Nikolay Shevchenko (N)

Department of Chemistry, University of California, Davis, Davis, California 95616, United States.

Mark Mascal (M)

Department of Chemistry, University of California, Davis, Davis, California 95616, United States.

Adam J Moulé (AJ)

Department of Chemical Engineering, University of California, Davis, Davis, California 95616, United States.

Classifications MeSH