Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors.

charge transport in situ conductivity modulation doping organic field-effect transistors organic heterostructure threshold voltage control

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
24 Feb 2021
Historique:
pubmed: 12 2 2021
medline: 12 2 2021
entrez: 11 2 2021
Statut: ppublish

Résumé

Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage

Identifiants

DOI: 10.1021/acsami.0c22224 PMID: 33569958
pubmed: 33569958
doi: 10.1021/acsami.0c22224
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

8664-8671

Auteurs

Ilia Lashkov (I)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.
ORCID: 0000-0001-7464-6451

Kevin Krechan (K)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

Katrin Ortstein (K)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

Felix Talnack (F)

Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universitat Dresden, Helmholtzstraße 18, Dresden, 01069, Germany.

Shu-Jen Wang (SJ)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

Stefan C B Mannsfeld (SCB)

Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universitat Dresden, Helmholtzstraße 18, Dresden, 01069, Germany.
ORCID: 0000-0003-0268-519X

Hans Kleemann (H)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

Karl Leo (K)

Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

Classifications MeSH