60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.
SiC-Schottky diode
linearity
readout circuit
sensitivity
wide-range temperature sensor
Journal
Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366
Informations de publication
Date de publication:
31 Jan 2021
31 Jan 2021
Historique:
received:
29
12
2020
revised:
20
01
2021
accepted:
28
01
2021
entrez:
12
2
2021
pubmed:
13
2
2021
medline:
13
2
2021
Statut:
epublish
Résumé
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V
Identifiants
pubmed: 33572603
pii: s21030942
doi: 10.3390/s21030942
pmc: PMC7866971
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
ID : PN-III-P2-2.1-PED-2019 Romanian Project under Contract SiC-HITs 275PED/2020
Organisme : Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
ID : Project PN-III-P1-1.1-PD-2019-0924 - SiC MOS
Organisme : Operational Programme Human Capital of the Ministry of European Funds.
ID : 51675/09.07.2019, SMIS Code 125125
Références
Sensors (Basel). 2019 May 24;19(10):
pubmed: 31137664
Materials (Basel). 2020 Jan 17;13(2):
pubmed: 31963426
Nanotechnology. 2020 Mar 20;31(12):125203
pubmed: 31816608
Sensors (Basel). 2018 Nov 03;18(11):
pubmed: 30400308
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pubmed: 32998308