Enhanced ferroelectric switching speed of Si-doped HfO
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
18 Mar 2021
18 Mar 2021
Historique:
received:
09
11
2020
accepted:
22
02
2021
entrez:
19
3
2021
pubmed:
20
3
2021
medline:
20
3
2021
Statut:
epublish
Résumé
Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO
Identifiants
pubmed: 33737670
doi: 10.1038/s41598-021-85773-7
pii: 10.1038/s41598-021-85773-7
pmc: PMC7973512
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
6290Subventions
Organisme : Samsung Research Funding and Incubation Center of Samsung Electronics
ID : SRFC-MA1902-01
Organisme : National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT)
ID : No. NRF-2020M3F3A2A01081594
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