Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures.
2D semiconductors
pulsed laser deposition
quantum well
tungsten diselenide
tungsten disulfide
van der Waals heterostructure
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
27 Apr 2021
27 Apr 2021
Historique:
pubmed:
24
3
2021
medline:
24
3
2021
entrez:
23
3
2021
Statut:
ppublish
Résumé
We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive
Identifiants
pubmed: 33755422
doi: 10.1021/acsnano.1c00544
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM