Impact of device scaling on the electrical properties of MoS
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
23 Mar 2021
23 Mar 2021
Historique:
received:
06
01
2021
accepted:
04
03
2021
entrez:
24
3
2021
pubmed:
25
3
2021
medline:
25
3
2021
Statut:
epublish
Résumé
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS
Identifiants
pubmed: 33758215
doi: 10.1038/s41598-021-85968-y
pii: 10.1038/s41598-021-85968-y
pmc: PMC7987965
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
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