Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect.
2D Topological Insulators
Boltzmann’s tyranny
Rashba spin−orbit interaction
Spin−orbit coupled Xene nanoribbons
Subthreshold swing
Topological Transistors
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
14 Apr 2021
14 Apr 2021
Historique:
pubmed:
30
3
2021
medline:
30
3
2021
entrez:
29
3
2021
Statut:
ppublish
Résumé
The subthreshold swing is the critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to
Identifiants
pubmed: 33780625
doi: 10.1021/acs.nanolett.1c00378
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM