A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect.


Journal

Science (New York, N.Y.)
ISSN: 1095-9203
Titre abrégé: Science
Pays: United States
ID NLM: 0404511

Informations de publication

Date de publication:
02 04 2021
Historique:
received: 19 10 2019
revised: 14 12 2020
accepted: 18 02 2021
entrez: 2 4 2021
pubmed: 3 4 2021
medline: 3 4 2021
Statut: ppublish

Résumé

Van der Waals interfaces can be formed by layer stacking without regard to lattice constants or symmetries of individual building blocks. We engineered the symmetry of a van der Waals interface of tungsten selenide and black phosphorus and realized in-plane electronic polarization that led to the emergence of a spontaneous photovoltaic effect. Spontaneous photocurrent was observed along the polar direction and was absent in the direction perpendicular to it. The observed spontaneous photocurrent was explained by a quantum-mechanical shift current that reflects the geometrical and topological electronic nature of this emergent interface. The present results offer a simple guideline for symmetry engineering that is applicable to a variety of van der Waals interfaces.

Identifiants

pubmed: 33795452
pii: 372/6537/68
doi: 10.1126/science.aaz9146
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

68-72

Informations de copyright

Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Auteurs

Takatoshi Akamatsu (T)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Toshiya Ideue (T)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan. ideue@ap.t.u-tokyo.ac.jp.

Ling Zhou (L)

College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.

Yu Dong (Y)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Sota Kitamura (S)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Mao Yoshii (M)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Dongyang Yang (D)

Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada.
Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada.

Masaru Onga (M)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Yuji Nakagawa (Y)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Kenji Watanabe (K)

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Takashi Taniguchi (T)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Joseph Laurienzo (J)

Department of Physics, Case Western Reserve University, Cleveland, OH, USA.

Junwei Huang (J)

College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.

Ziliang Ye (Z)

Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada.
Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada.

Takahiro Morimoto (T)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Hongtao Yuan (H)

College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.

Yoshihiro Iwasa (Y)

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.

Classifications MeSH