Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition.

area-selective deposition atomic layer deposition (ALD) nanofabrication self-aligned fabrication surface diffusion

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
28 Apr 2021
Historique:
pubmed: 16 4 2021
medline: 16 4 2021
entrez: 15 4 2021
Statut: ppublish

Résumé

Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity originates from surface modifications of the substrate that allow or block precursor adsorption. The control of the deposition process currently remains a major challenge as the selectivity of the no-growth areas is lost quickly. Here, we show that surface modifications of the substrate strongly manipulate surface diffusion. The selective deposition of TiO

Identifiants

pubmed: 33856210
doi: 10.1021/acsami.0c22121
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

19398-19405

Auteurs

Philip Klement (P)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Daniel Anders (D)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Lukas Gümbel (L)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Michele Bastianello (M)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Fabian Michel (F)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Jörg Schörmann (J)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Matthias T Elm (MT)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.
Institute of Physical Chemistry, Justus Liebig University Giessen, Heinrich-Buff-Ring 17, Giessen D-35392, Germany.

Christian Heiliger (C)

Institute of Theoretical Physics and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Sangam Chatterjee (S)

Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany.

Classifications MeSH