Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K

Journal

Journal of the American Chemical Society
ISSN: 1520-5126
Titre abrégé: J Am Chem Soc
Pays: United States
ID NLM: 7503056

Informations de publication

Date de publication:
28 Apr 2021
Historique:
pubmed: 16 4 2021
medline: 16 4 2021
entrez: 15 4 2021
Statut: ppublish

Résumé

Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a 3D network of ionic (K···Se) and covalent bonds (Bi-Se), K

Identifiants

DOI: 10.1021/jacs.1c01484 PMID: 33856803
pubmed: 33856803
doi: 10.1021/jacs.1c01484
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6221-6228

Auteurs

Saiful M Islam (SM)

Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, Mississippi 39217, United States.
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0001-8518-1856

Vinod K Sangwan (VK)

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0002-5623-5285

D Bruce Buchholz (D)

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.

Spencer A Wells (SA)

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.

Lintao Peng (L)

Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.

Li Zeng (L)

Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0001-6390-0370

Yihui He (Y)

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0002-1057-6826

Mark C Hersam (MC)

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0003-4120-1426

John B Ketterson (JB)

Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States.
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States.

Tobin J Marks (TJ)

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0001-8771-0141

Michael J Bedzyk (MJ)

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0002-1026-4558

Matthew Grayson (M)

Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States.
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States.

Mercouri G Kanatzidis (MG)

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
ORCID: 0000-0003-2037-4168

Classifications MeSH