Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide.
Nanotechnology
dislocations
ferroelectric
functional oxide
hexagonal manganites
semiconductors
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
28 Apr 2021
28 Apr 2021
Historique:
pubmed:
17
4
2021
medline:
17
4
2021
entrez:
16
4
2021
Statut:
ppublish
Résumé
Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities. In this work, we demonstrate the creation of dislocations in the ferroelectric semiconductor Er(Mn,Ti)O
Identifiants
pubmed: 33861614
doi: 10.1021/acs.nanolett.0c04816
pmc: PMC8155316
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
3386-3392Références
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