Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO

electron conductivity energy band offset field-effect transistor intrinsic silicon low nanoscale silicon dioxide silicon nanowires

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
05 May 2021
Historique:
pubmed: 21 4 2021
medline: 21 4 2021
entrez: 20 4 2021
Statut: ppublish

Résumé

Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO

Identifiants

DOI: 10.1021/acsami.0c22360 PMID: 33878265
pubmed: 33878265
doi: 10.1021/acsami.0c22360
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

20479-20488

Auteurs

Dirk König (D)

Integrated Materials Design Laboratory (IMDL), The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Smart Materials and Surface Group, University of New South Wales, Sydney, New South Wales 2052, Australia.
ORCID: 0000-0001-5485-9142

Michael Frentzen (M)

Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen 52074, Germany.

Noël Wilck (N)

Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen 52074, Germany.

Birger Berghoff (B)

Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen 52074, Germany.

Igor Píš (I)

Laboratorio TASC, IOM-CNR, Area Science Park S.S. 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0002-5222-9291

Silvia Nappini (S)

Laboratorio TASC, IOM-CNR, Area Science Park S.S. 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0002-4944-5487

Federica Bondino (F)

Laboratorio TASC, IOM-CNR, Area Science Park S.S. 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0001-6505-9319

Merlin Müller (M)

Central Facility for Electron Microscopy, RWTH Aachen University, Aachen 52074, Germany.
Ametek GmbH, BU Gatan, Ingolstädter Straße 12, Munich 80807, Germany.

Sara Gonzalez (S)

Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0002-7698-3539

Giovanni Di Santo (G)

Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0001-9394-2563

Luca Petaccia (L)

Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy.
ORCID: 0000-0001-8698-1468

Joachim Mayer (J)

Central Facility for Electron Microscopy, RWTH Aachen University, Aachen 52074, Germany.

Sean Smith (S)

Integrated Materials Design Laboratory (IMDL), The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Department of Applied Mathematics, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
ORCID: 0000-0002-5679-8205

Joachim Knoch (J)

Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen 52074, Germany.

Classifications MeSH