Electric field controlled type-I and type-II conversion of BP/SnS van der Waals heterostructure.

BP/SnS heterostructure electric field first-principles type I and type II conversion

Journal

Journal of physics. Condensed matter : an Institute of Physics journal
ISSN: 1361-648X
Titre abrégé: J Phys Condens Matter
Pays: England
ID NLM: 101165248

Informations de publication

Date de publication:
25 May 2021
Historique:
received: 02 02 2021
accepted: 27 04 2021
pubmed: 28 4 2021
medline: 28 4 2021
entrez: 27 4 2021
Statut: epublish

Résumé

Type-I heterostructure, in which electrons and holes are confined in same region, is widely used in light emitting diodes and semiconductor lasers. Type-II heterostructure is widely used in photovoltaic devices because of its excellent spatial separation property of electrons and holes. Can we integrate photovoltaic, photoelectric properties with luminescent property in one device? Here we report a van der Waals heterostructure formed by black phosphorus (BP) and SnS monolayers. It is expected to realize these functions in one device. By first-principles methods, the structural stability, electronic properties and optical properties are investigated. It was found that the BP/SnS bilayer is type-II heterostructure with an indirect bandgap of 0.56 eV. The

Identifiants

pubmed: 33906168
doi: 10.1088/1361-648X/abfc15
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

© 2021 IOP Publishing Ltd.

Auteurs

Jia-Le Chen (JL)

Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China.

Xin-Xin Wang (XX)

Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China.

Li-Jie Shi (LJ)

Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China.

Classifications MeSH