Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
06 May 2021
Historique:
pubmed: 30 4 2021
medline: 30 4 2021
entrez: 29 4 2021
Statut: ppublish

Résumé

Electronic transport through a metal|semiconductor (M|S) heterojunction is largely determined by its Schottky barrier. In 3D M|S junctions, the barrier height determines the turn-on voltage and is often pinned by the interface states, causing Fermi level pinning (FLP). The pinning strength in 3D depends on the ratio

Identifiants

pubmed: 33913712
doi: 10.1021/acs.jpclett.0c03663
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

4299-4305

Auteurs

Henry Yu (H)

Applied Physics Program, Rice University, Houston, Texas 77005, United States.
Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.

Sunny Gupta (S)

Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.

Alex Kutana (A)

Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.

Boris I Yakobson (BI)

Applied Physics Program, Rice University, Houston, Texas 77005, United States.
Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.
Department of Chemistry, Rice University, Houston, Texas 77005, United States.

Classifications MeSH