Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p
GaN
TCAD
device modeling
leakage modeling
pn diodes
semi-vertical
vertical
Journal
Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903
Informations de publication
Date de publication:
16 Apr 2021
16 Apr 2021
Historique:
received:
26
02
2021
revised:
12
04
2021
accepted:
13
04
2021
entrez:
30
4
2021
pubmed:
1
5
2021
medline:
1
5
2021
Statut:
epublish
Résumé
This work investigates p
Identifiants
pubmed: 33923422
pii: mi12040445
doi: 10.3390/mi12040445
pmc: PMC8072673
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Electronic Components and Systems for European Leadership
ID : 826392
Organisme : NoveGaN
ID : STARS CoG Grants
Références
Phys Rev Lett. 2004 May 28;92(21):216802
pubmed: 15245304
Phys Rev Lett. 2013 Feb 22;110(8):087404
pubmed: 23473203
Sci Rep. 2019 Jan 30;9(1):970
pubmed: 30700809