A method of using Si L-edge for O/Si and N/Si quantitative ratio analysis by electron energy loss spectroscopy (EELS).
Electron energy loss spectroscopy (EELS)
Quantitative elemental analysis
Transmission electron microscopy (TEM)
Journal
Micron (Oxford, England : 1993)
ISSN: 1878-4291
Titre abrégé: Micron
Pays: England
ID NLM: 9312850
Informations de publication
Date de publication:
Jul 2021
Jul 2021
Historique:
received:
27
01
2021
revised:
26
03
2021
accepted:
29
03
2021
pubmed:
4
5
2021
medline:
4
5
2021
entrez:
3
5
2021
Statut:
ppublish
Résumé
In EELS core loss excitation, inverse jump ratio is defined as a ratio between intensity of a pre-core-loss-edge and a signal of the core loss excitation after background subtraction. A linear relationship between inverse jump ratio of Si L-edge and O/Si and N/Si intensity ratio is found for electron energy loss spectroscopy (EELS) analysis. This relationship is used to analyze O/Si and N/Si atomic ratio to quantify the elemental distribution in SiON films and the result is compared with XPS analysis on the same SiON films. The method is applied to blanket wafer elemental analysis and can be used for flash memory structure (3D NAND) to obtain atomic ratios of N/Si and O/Si for tunnel oxide at sub-nanometer scale.
Identifiants
pubmed: 33940344
pii: S0968-4328(21)00056-1
doi: 10.1016/j.micron.2021.103065
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
103065Informations de copyright
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