Engineering new limits to magnetostriction through metastability in iron-gallium alloys.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
12 May 2021
Historique:
received: 21 09 2020
accepted: 30 03 2021
entrez: 13 5 2021
pubmed: 14 5 2021
medline: 14 5 2021
Statut: epublish

Résumé

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe

Identifiants

pubmed: 33980848
doi: 10.1038/s41467-021-22793-x
pii: 10.1038/s41467-021-22793-x
pmc: PMC8115637
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

2757

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Auteurs

P B Meisenheimer (PB)

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.

R A Steinhardt (RA)

Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.

S H Sung (SH)

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.

L D Williams (LD)

Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY, USA.

S Zhuang (S)

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.

M E Nowakowski (ME)

Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.

S Novakov (S)

Department of Physics, University of Michigan, Ann Arbor, MI, USA.

M M Torunbalci (MM)

OxideMEMS Lab, Purdue University, West Lafayette, IN, USA.

B Prasad (B)

Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.

C J Zollner (CJ)

School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.

Z Wang (Z)

School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.

N M Dawley (NM)

Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.

J Schubert (J)

Peter Grünberg Institute (PGI-9) and JARA Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Jülich, Germany.

A H Hunter (AH)

Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI, USA.

S Manipatruni (S)

Components Research, Intel Corporation, Hillsboro, OR, USA.

D E Nikonov (DE)

Components Research, Intel Corporation, Hillsboro, OR, USA.

I A Young (IA)

Components Research, Intel Corporation, Hillsboro, OR, USA.

L Q Chen (LQ)

Department of Materials Science and Engineering, Penn State University, State College, PA, USA.

J Bokor (J)

Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.

S A Bhave (SA)

OxideMEMS Lab, Purdue University, West Lafayette, IN, USA.

R Ramesh (R)

Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
Materials Sciences Division, Lawrence Berkeley National Laboratory, CA, USA.
Department of Physics, University of California, Berkeley, CA, USA.

J-M Hu (JM)

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.

E Kioupakis (E)

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.

R Hovden (R)

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.

D G Schlom (DG)

Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany.

J T Heron (JT)

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA. jtheron@umich.edu.

Classifications MeSH