Flexible Ta/TiO

electroforming-free flexible linear conductance modulation memristive synapses

Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
28 May 2021
Historique:
received: 24 12 2020
accepted: 13 05 2021
pubmed: 14 5 2021
medline: 14 5 2021
entrez: 13 5 2021
Statut: epublish

Résumé

It is very urgent to build memristive synapses and even wearable devices to simulate the basic functions of biological synapses. The linear conductance modulation is the basis of analog memristor for neuromorphic computing. By optimizing the interface engineering wherein Ta/TiO

Identifiants

pubmed: 33984854
doi: 10.1088/1361-6528/ac00e0
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

© 2021 IOP Publishing Ltd.

Auteurs

Jiacheng Li (J)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Chenyang Hao (C)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Shuqin Guo (S)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Yingchen Li (Y)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Jiuzhou Ren (J)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Liwei Zhou (L)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Jinshi Zhao (J)

Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin, 300384, People's Republic of China.

Classifications MeSH