Defect-Mediated Slow Carrier Recombination and Broad Photoluminescence in Non-Metal-Doped ZnIn


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
27 May 2021
Historique:
pubmed: 22 5 2021
medline: 22 5 2021
entrez: 21 5 2021
Statut: ppublish

Résumé

Elemental doping has already been established to be one of the most effective approaches for band-gap engineering and controlled material response for improved photocatalytic activity. Herein atomically thin ZnIn

Identifiants

pubmed: 34018752
doi: 10.1021/acs.jpclett.1c01203
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

5000-5008

Auteurs

Tanmay Goswami (T)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

Dharmendra Kumar Yadav (DK)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

Himanshu Bhatt (H)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

Gurpreet Kaur (G)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

Ayushi Shukla (A)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

K Justice Babu (KJ)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.

Hirendra N Ghosh (HN)

Institute of Nano Science and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, Punjab 140306, India.
Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India.

Classifications MeSH