Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures.

2D semiconductors MoS 2 charge transfer electron-phonon coupling molecular dopants photoelectron spectroscopy

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Jul 2021
Historique:
revised: 03 04 2021
received: 23 12 2020
pubmed: 26 5 2021
medline: 26 5 2021
entrez: 25 5 2021
Statut: ppublish

Résumé

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of state distribution of the components governs the amount of charge transfer, but a notable dependence on temperature is not yet considered, particularly for weakly interacting systems. Here, it is experimentally observed that the amount of ground-state charge transfer in a van der Waals heterostructure formed by monolayer MoS

Identifiants

pubmed: 34032324
doi: 10.1002/adma.202008677
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2008677

Subventions

Organisme : Deutsche Forschungsgemeinschaft
Organisme : JSPS KAKENHI
ID : JP18H03904
Organisme : National Research Foundation
ID : 2018M3D1A1058793
Organisme : Technology Innovation Program
ID : 20012502
Organisme : Korean Ministry of Trade, industry and Energy

Informations de copyright

© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.

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Auteurs

Soohyung Park (S)

Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.

Haiyuan Wang (H)

Fritz Haber Institute of the Max Planck Society, 14195, Berlin, Germany.
Chaire de Simulation à l'Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Thorsten Schultz (T)

Humboldt-Universität zu Berlin, Institut für Physik and IRIS Adlershof, 12489, Berlin, Germany.
Helmholtz-Zentrum für Materialien und Energie GmbH, 12489, Berlin, Germany.

Dongguen Shin (D)

Humboldt-Universität zu Berlin, Institut für Physik and IRIS Adlershof, 12489, Berlin, Germany.

Ruslan Ovsyannikov (R)

Helmholtz-Zentrum für Materialien und Energie GmbH, 12489, Berlin, Germany.

Marios Zacharias (M)

Fritz Haber Institute of the Max Planck Society, 14195, Berlin, Germany.
Department of Mechanical and Materials Science Engineering, Cyprus University of Technology, Limassol, 3603, Cyprus.

Dmitrii Maksimov (D)

Fritz Haber Institute of the Max Planck Society, 14195, Berlin, Germany.
Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.

Matthias Meissner (M)

Institute for Molecular Science, Okazaki, 444-8585, Japan.

Yuri Hasegawa (Y)

Institute for Molecular Science, Okazaki, 444-8585, Japan.

Takuma Yamaguchi (T)

Institute for Molecular Science, Okazaki, 444-8585, Japan.

Satoshi Kera (S)

Institute for Molecular Science, Okazaki, 444-8585, Japan.

Areej Aljarb (A)

Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.

Mariam Hakami (M)

Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.

Lain-Jong Li (LJ)

Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
Department of Mechanical Engineering, The University of Hong Kong, Pok Fu Lam Road, Hong Kong, China.

Vincent Tung (V)

Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.

Patrick Amsalem (P)

Humboldt-Universität zu Berlin, Institut für Physik and IRIS Adlershof, 12489, Berlin, Germany.

Mariana Rossi (M)

Fritz Haber Institute of the Max Planck Society, 14195, Berlin, Germany.
Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.

Norbert Koch (N)

Humboldt-Universität zu Berlin, Institut für Physik and IRIS Adlershof, 12489, Berlin, Germany.
Helmholtz-Zentrum für Materialien und Energie GmbH, 12489, Berlin, Germany.

Classifications MeSH