Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics.
device-to-device variability
epitaxial growth
field-effect transistors
metal−organic chemical vapor deposition
sapphire template
transition metal dichalcogenides
uniformity
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
22 Jun 2021
22 Jun 2021
Historique:
pubmed:
28
5
2021
medline:
28
5
2021
entrez:
27
5
2021
Statut:
ppublish
Résumé
In view of its epitaxial seeding capability,
Identifiants
pubmed: 34042437
doi: 10.1021/acsnano.0c07761
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM