Quantum Spin Torque Driven Transmutation of an Antiferromagnetic Mott Insulator.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
14 May 2021
Historique:
received: 12 10 2020
accepted: 10 03 2021
entrez: 28 5 2021
pubmed: 29 5 2021
medline: 29 5 2021
Statut: ppublish

Résumé

The standard model of spin-transfer torque (STT) in antiferromagnetic spintronics considers the exchange of angular momentum between quantum spins of flowing electrons and noncollinear-to-them localized spins treated as classical vectors. These vectors are assumed to realize Néel order in equilibrium, ↑↓⋯↑↓, and their STT-driven dynamics is described by the Landau-Lifshitz-Gilbert (LLG) equation. However, many experimentally employed materials (such as archetypal NiO) are strongly electron-correlated antiferromagnetic Mott insulators (AFMIs) whose localized spins form a ground state quite different from the unentangled Néel state |↑↓⋯↑↓⟩. The true ground state is entangled by quantum spin fluctuations, leading to the expectation value of all localized spins being zero, so that LLG dynamics of classical vectors of fixed length rotating due to STT cannot even be initiated. Instead, a fully quantum treatment of both conduction electrons and localized spins is necessary to capture the exchange of spin angular momentum between them, denoted as quantum STT. We use a recently developed time-dependent density matrix renormalization group approach to quantum STT to predict how injection of a spin-polarized current pulse into a normal metal layer coupled to an AFMI overlayer via exchange interaction and possibly small interlayer hopping-mimicking, e.g., topological-insulator/NiO bilayer employed experimentally-will induce a nonzero expectation value of AFMI localized spins. This new nonequilibrium phase is a spatially inhomogeneous ferromagnet with a zigzag profile of localized spins. The total spin absorbed by AFMI increases with electron-electron repulsion in AFMIs, as well as when the two layers do not exchange any charge.

Identifiants

pubmed: 34047602
doi: 10.1103/PhysRevLett.126.197202
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

197202

Auteurs

Marko D Petrović (MD)

Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA.

Priyanka Mondal (P)

Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA.

Adrian E Feiguin (AE)

Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA.

Branislav K Nikolić (BK)

Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA.

Classifications MeSH