Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene.

graphene heterointegration ionicity remote epitaxy single-crystal membrane transfer process

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
22 Jun 2021
Historique:
pubmed: 4 6 2021
medline: 4 6 2021
entrez: 3 6 2021
Statut: ppublish

Résumé

Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials

Identifiants

DOI: 10.1021/acsnano.1c03296 PMID: 34081854
pubmed: 34081854
doi: 10.1021/acsnano.1c03296
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

10587-10596

Auteurs

Hyunseok Kim (H)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
ORCID: 0000-0003-3091-8413

Kuangye Lu (K)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Yunpeng Liu (Y)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Hyun S Kum (HS)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Ki Seok Kim (KS)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Kuan Qiao (K)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Sang-Hoon Bae (SH)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Sangho Lee (S)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
ORCID: 0000-0003-4164-1827

You Jin Ji (YJ)

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Ki Hyun Kim (KH)

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Hanjong Paik (H)

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States.

Saien Xie (S)

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States.
Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States.

Heechang Shin (H)

School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea.

Chanyeol Choi (C)

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
ORCID: 0000-0003-3304-3253

June Hyuk Lee (JH)

Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea.

Chengye Dong (C)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Joshua A Robinson (JA)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
ORCID: 0000-0002-1513-7187

Jae-Hyun Lee (JH)

Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea.
ORCID: 0000-0001-5117-8923

Jong-Hyun Ahn (JH)

School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea.
ORCID: 0000-0002-8135-7719

Geun Young Yeom (GY)

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.

Darrell G Schlom (DG)

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States.
Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States.
Leibniz-Institut für Kristallzüchtung, Berlin 12489, Germany.
ORCID: 0000-0003-2493-6113

Jeehwan Kim (J)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
ORCID: 0000-0002-1547-0967

Classifications MeSH