Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons.
cooling dynamics
graphene
hot electrons
optical phonons
phonon bottleneck
transient absorption microscopy
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
27 Jul 2021
27 Jul 2021
Historique:
pubmed:
18
6
2021
medline:
18
6
2021
entrez:
17
6
2021
Statut:
ppublish
Résumé
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand the relaxation dynamics after photoexcitation. These dynamics contain a sub-100 fs thermalization phase, which occurs through carrier-carrier scattering and leads to a carrier distribution with an elevated temperature. This is followed by a picosecond cooling phase, where different phonon systems play a role: graphene acoustic and optical phonons, and substrate phonons. Here, we address the cooling pathway of two technologically relevant systems, both consisting of high-quality graphene with a mobility >10 000 cm
Identifiants
pubmed: 34139125
doi: 10.1021/acsnano.0c10864
pmc: PMC8320233
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM