Giant conductivity of mobile non-oxide domain walls.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
25 Jun 2021
Historique:
received: 14 09 2020
accepted: 31 05 2021
entrez: 26 6 2021
pubmed: 27 6 2021
medline: 27 6 2021
Statut: epublish

Résumé

Atomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV

Identifiants

pubmed: 34172747
doi: 10.1038/s41467-021-24160-2
pii: 10.1038/s41467-021-24160-2
pmc: PMC8233373
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3975

Références

Catalan, G., Seidel, J., Ramesh, R. & Scott, J. F. Domain wall nanoelectronics. Rev. Mod. Phys. 84, 119 (2012).
doi: 10.1103/RevModPhys.84.119
Erhart, J. Domain wall orientations in ferroelastics and ferroelectrics. Phase Transit. 77, 989–1074 (2004).
doi: 10.1080/01411590410001710744
Aird, A. & Salje, E. K. Sheet superconductivity in twin walls: experimental evidence of WO
doi: 10.1088/0953-8984/10/22/003
Salje, E. K. Multiferroic domain boundaries as active memory devices: trajectories towards domain boundary engineering. ChemPhysChem 11, 940–950 (2010).
pubmed: 20217888 doi: 10.1002/cphc.200900943
Farokhipoor, S. et al. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide. Nature 515, 379–383 (2014).
pubmed: 25409828 doi: 10.1038/nature13918
Geirhos, K. et al. Macroscopic manifestation of domain-wall magnetism and magnetoelectric effect in a Néel-type skyrmion host. npj Quantum Mater. 5, 44 (2020).
doi: 10.1038/s41535-020-0247-z
Zubko, P., Catalan, G., Buckley, A., Welche, P. & Scott, J. Strain-gradient-induced polarization in SrTiO
pubmed: 17995293 doi: 10.1103/PhysRevLett.99.167601
Van Aert, S. et al. Direct observation of ferrielectricity at ferroelastic domain boundaries in CaTiO
pubmed: 22223264 doi: 10.1002/adma.201103717
Yun, S. et al. Flexopiezoelectricity at ferroelastic domain walls in WO
doi: 10.1038/s41467-020-18644-w
Vul, B., Guro, G. & Ivanchik, I. Encountering domains in ferroelectrics. Ferroelectrics 6, 29–31 (1973).
doi: 10.1080/00150197308237691
Gureev, M. Y., Tagantsev, A. K. & Setter, N. Head-to-head and tail-to-tail 180
doi: 10.1103/PhysRevB.83.184104
Eliseev, E., Morozovska, A., Svechnikov, G., Gopalan, V. & Shur, V. Y. Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors. Phys. Rev. B 83, 235313 (2011).
doi: 10.1103/PhysRevB.83.235313
Meier, D. Functional domain walls in multiferroics. J. Phys. Condens. Matter 27, 463003 (2015).
pubmed: 26523728 doi: 10.1088/0953-8984/27/46/463003
Sluka, T., Bednyakov, P., Yudin, P., Crassous, A. & Tagantsev, A. Charged domain walls in ferroelectrics. In Topological Structures in Ferroic Materials, 103–138 (Springer, 2016).
Sluka, T., Tagantsev, A. K., Bednyakov, P. & Setter, N. Free-electron gas at charged domain walls in insulating BaTiO
doi: 10.1038/ncomms2839
Schröder, M. et al. Conducting domain walls in lithium niobate single crystals. Adv. Funct. Mater. 22, 3936–3944 (2012).
doi: 10.1002/adfm.201201174
Werner, C. S. et al. Large and accessible conductivity of charged domain walls in lithium niobate. Sci. Rep. 7, 1–8 (2017).
doi: 10.1038/s41598-017-09703-2
Meier, D. et al. Anisotropic conductance at improper ferroelectric domain walls. Nat. Mater. 11, 284–288 (2012).
pubmed: 22367003 doi: 10.1038/nmat3249
Wu, W., Horibe, Y., Lee, N., Cheong, S.-W. & Guest, J. Conduction of topologically protected charged ferroelectric domain walls. Phys. Rev. Lett. 108, 077203 (2012).
pubmed: 22401247 doi: 10.1103/PhysRevLett.108.077203
Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nat. Mater. 8, 229–234 (2009).
pubmed: 19169247 doi: 10.1038/nmat2373
Farokhipoor, S. & Noheda, B. Conduction through 71
pubmed: 22026801 doi: 10.1103/PhysRevLett.107.127601
Vasudevan, R. et al. Domain wall geometry controls conduction in ferroelectrics. Nano Lett. 12, 5524–5531 (2012).
pubmed: 22994244 doi: 10.1021/nl302382k
Guyonnet, J., Gaponenko, I., Gariglio, S. & Paruch, P. Conduction at domain walls in insulating Pb(Zr
pubmed: 21956256 doi: 10.1002/adma.201102254
McQuaid, R. G., Campbell, M. P., Whatmore, R. W., Kumar, A. & Gregg, J. M. Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite. Nat. Commun. 8, 15105 (2017).
pubmed: 28508870 pmcid: 5440803 doi: 10.1038/ncomms15105
Bednyakov, P. S., Sturman, B. I., Sluka, T., Tagantsev, A. K. & Yudin, P. V. Physics and applications of charged domain walls. npj Comput. Mater. 4, 65 (2018).
doi: 10.1038/s41524-018-0121-8
Johrendt, D. Crystal and electronic structure of the tetrahedral v4 cluster compounds GeV
doi: 10.1002/(SICI)1521-3749(199806)624:6<952::AID-ZAAC952>3.0.CO;2-L
Pocha, R., Johrendt, D. & Pöttgen, R. Electronic and structural instabilities in GaV
doi: 10.1021/cm001099b
Nakamura, H., Chudo, H. & Shiga, M. Structural transition of the tetrahedral metal cluster: nuclear magnetic resonance study of GaV
doi: 10.1088/0953-8984/17/38/007
Müller, H., Kockelmann, W. & Johrendt, D. The magnetic structure and electronic ground states of mott insulators GeV
doi: 10.1021/cm052809m
Singh, K. et al. Orbital-ordering-driven multiferroicity and magnetoelectric coupling in GeV
pubmed: 25302917 doi: 10.1103/PhysRevLett.113.137602
Janod, E. et al. Negative colossal magnetoresistance driven by carrier type in the ferromagnetic mott insulator GaV
doi: 10.1021/acs.chemmater.5b01168
Reschke, S. et al. Lattice dynamics and electronic excitations in a large family of lacunar spinels with a breathing pyrochlore lattice structure. Phys. Rev. B 101, 075118 (2020).
doi: 10.1103/PhysRevB.101.075118
Reschke, S. et al. Optical conductivity in multiferroic GaV
doi: 10.1103/PhysRevB.96.144302
Kim, H.-S., Haule, K. & Vanderbilt, D. Molecular Mott state in the deficient spinel GaV
Ruff, E. et al. Multiferroicity and skyrmions carrying electric polarization in GaV
pubmed: 26702441 pmcid: 4681337 doi: 10.1126/sciadv.1500916
Widmann, S. et al. On the multiferroic skyrmion-host GaV
doi: 10.1080/14786435.2016.1253885
Butykai, Á. et al. Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV
pubmed: 28294193 pmcid: 5353724 doi: 10.1038/srep44663
Neuber, E. et al. Architecture of nanoscale ferroelectric domains in GaMo
pubmed: 30255852 doi: 10.1088/1361-648X/aae448
Hlinka, J. et al. Lattice modes and the jahn-teller ferroelectric transition of GaV
doi: 10.1103/PhysRevB.94.060104
Wang, Z. et al. Polar dynamics at the jahn-teller transition in ferroelectric GaV
pubmed: 26613473 doi: 10.1103/PhysRevLett.115.207601
Xu, K. & Xiang, H. Unusual ferroelectricity induced by the jahn-teller effect: a case study on lacunar spinel compounds. Phys. Rev. B 92, 121112 (2015).
doi: 10.1103/PhysRevB.92.121112
Zhang, H.-M. et al. Possible emergence of a skyrmion phase in ferroelectric GaMo
doi: 10.1103/PhysRevB.99.214427
Kézsmárki, I. et al. Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV
pubmed: 26343913 doi: 10.1038/nmat4402
Yadav, C., Nigam, A. & Rastogi, A. Thermodynamic properties of ferromagnetic mott-insulator GaV
doi: 10.1016/j.physb.2007.10.172
Nakamura, H. et al. Low-field multi-step magnetization of GaV
doi: 10.1088/1742-6596/145/1/012077
Ehlers, D. et al. Exchange anisotropy in the skyrmion host GaV
pubmed: 28002048 doi: 10.1088/1361-648X/aa4e7e
Choi, T. et al. Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO
pubmed: 20154694 doi: 10.1038/nmat2632
Seidel, J. et al. Domain wall conductivity in La-doped BiFeO
pubmed: 21231197 doi: 10.1103/PhysRevLett.105.197603
Dally, R. L. et al. Magnetic phase transitions and spin density distribution in the molecular multiferroic system GaV
doi: 10.1103/PhysRevB.102.014410
Eliseev, E. A. et al. Conductivity of twin-domain-wall/surface junctions in ferroelastics: Interplay of deformation potential, octahedral rotations, improper ferroelectricity, and flexoelectric coupling. Phys. Rev. B 86, 085416 (2012).
doi: 10.1103/PhysRevB.86.085416
Morozovska, A. N., Vasudevan, R. K., Maksymovych, P., Kalinin, S. V. & Eliseev, E. A. Anisotropic conductivity of uncharged domain walls in BiFeO
doi: 10.1103/PhysRevB.86.085315
Sharma, P., Schoenherr, P. & Seidel, J. Functional ferroic domain walls for nanoelectronics. Materials 12, 2927 (2019).
pmcid: 6766344 doi: 10.3390/ma12182927
Zhang, D. et al. Superior polarization retention through engineered domain wall pinning. Nat. Commun. 11, 1–8 (2020).
Bencan, A. et al. Domain-wall pinning and defect ordering in BiFeO
doi: 10.1038/s41467-020-15595-0
He, L. & Vanderbilt, D. First-principles study of oxygen-vacancy pinning of domain walls in PbTiO
doi: 10.1103/PhysRevB.68.134103
Rojac, T., Kosec, M., Budic, B., Setter, N. & Damjanovic, D. Strong ferroelectric domain-wall pinning in BiFeO
doi: 10.1063/1.3490249
He, Q. et al. Magnetotransport at domain walls in BiFeO
pubmed: 22401116 doi: 10.1103/PhysRevLett.108.067203
Domingo, N., Farokhipoor, S., Santiso, J., Noheda, B. & Catalan, G. Domain wall magnetoresistance in BiFeO
pubmed: 28627502 doi: 10.1088/1361-648X/aa7a24
Ma, E. Y. et al. Mobile metallic domain walls in an all-in-all-out magnetic insulator. Science 350, 538–541 (2015).
pubmed: 26516280 doi: 10.1126/science.aac8289

Auteurs

S Ghara (S)

Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany.

K Geirhos (K)

Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany.

L Kuerten (L)

Department of Materials, ETH Zurich, Zurich, Switzerland.

P Lunkenheimer (P)

Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany.

V Tsurkan (V)

Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany.
Institute of Applied Physics, Chisinau, Republic of Moldova.

M Fiebig (M)

Department of Materials, ETH Zurich, Zurich, Switzerland.

I Kézsmárki (I)

Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany. istvan.kezsmarki@physik.uni-augsburg.de.

Classifications MeSH