Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors.
Journal
ACS applied electronic materials
ISSN: 2637-6113
Titre abrégé: ACS Appl Electron Mater
Pays: United States
ID NLM: 101734996
Informations de publication
Date de publication:
22 Jun 2021
22 Jun 2021
Historique:
received:
19
04
2021
accepted:
20
05
2021
entrez:
28
6
2021
pubmed:
29
6
2021
medline:
29
6
2021
Statut:
ppublish
Résumé
The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10
Identifiants
pubmed: 34179789
doi: 10.1021/acsaelm.1c00367
pmc: PMC8223485
doi:
Types de publication
Journal Article
Langues
eng
Pagination
2783-2789Subventions
Organisme : Austrian Science Fund FWF
ID : P 30222
Pays : Austria
Informations de copyright
© 2021 The Authors. Published by American Chemical Society.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
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