Mapping of Fabry-Perot and whispering gallery modes in GaN microwires by nonlinear imaging.
gallium nitride
nonlinear imaging
second-harmonic generation
whispering gallery mode
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
16 Jul 2021
16 Jul 2021
Historique:
received:
15
03
2021
accepted:
30
06
2021
pubmed:
1
7
2021
medline:
1
7
2021
entrez:
30
6
2021
Statut:
epublish
Résumé
Engineering nonlinear optical responses at the microscale is a key topic in photonics for achieving efficient frequency conversion and light manipulation. Gallium nitride (GaN) is a promising semiconductor material for integrated nonlinear photonic structures. In this work, we use epitaxially grown GaN microwires as nonlinear optical whispering gallery and Fabry-Perot resonators. We demonstrate an effective generation of second-harmonic and polarization-dependent signals of whispering gallery and Fabry-Perot modes (FPM) under near-infrared (NIR) excitation. We show how the rotation of the excitation polarization can be used to control and switch between Fabry-Perot and whispering gallery modes in tapered GaN microwire resonators. We demonstrate the enhancement of two-photon luminescence in the yellow-green spectral range due to efficient coupling between whispering gallery, FPM, and excitonic states in GaN. This luminescence enhancement allows us to conveniently visualize whispering gallery modes excited with a NIR source. Such microwire resonators can be used as compact microlasers or sensing elements in photonic sensors.
Identifiants
pubmed: 34192677
doi: 10.1088/1361-6528/ac1017
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2021 IOP Publishing Ltd.