One-Step Synthesis of SnI

Journal

Journal of the American Chemical Society
ISSN: 1520-5126
Titre abrégé: J Am Chem Soc
Pays: United States
ID NLM: 7503056

Informations de publication

Date de publication:
28 Jul 2021
Historique:
pubmed: 2 7 2021
medline: 2 7 2021
entrez: 1 7 2021
Statut: ppublish

Résumé

Contemporary thin-film photovoltaic (PV) materials contain elements that are scarce (CIGS) or regulated (CdTe and lead-based perovskites), a fact that may limit the widespread impact of these emerging PV technologies. Tin halide perovskites utilize materials less stringently regulated than the lead (Pb) employed in mainstream perovskite solar cells; however, even today's best tin-halide perovskite thin films suffer from limited carrier diffusion length and poor film morphology. We devised a synthetic route to enable in situ reaction between metallic Sn and I

Identifiants

DOI: 10.1021/jacs.1c03032 PMID: 34196528
pubmed: 34196528
doi: 10.1021/jacs.1c03032
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

10970-10976

Auteurs

Xianyuan Jiang (X)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0001-5966-0175

Hansheng Li (H)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0001-5065-1838

Qilin Zhou (Q)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0003-3359-5963

Qi Wei (Q)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0002-5506-0495

Mingyang Wei (M)

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.

Luozhen Jiang (L)

Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China.
University of Chinese Academy of Sciences, Beijing 100049, China.

Zhen Wang (Z)

Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China.
University of Chinese Academy of Sciences, Beijing 100049, China.

Zijian Peng (Z)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

Fei Wang (F)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

Zihao Zang (Z)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

Kaimin Xu (K)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0002-4060-2132

Yi Hou (Y)

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.

Sam Teale (S)

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.
ORCID: 0000-0001-9638-3453

Wenjia Zhou (W)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

Rui Si (R)

Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China.

Xingyu Gao (X)

Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China.
ORCID: 0000-0003-1477-0092

Edward H Sargent (EH)

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.
ORCID: 0000-0003-0396-6495

Zhijun Ning (Z)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
ORCID: 0000-0002-9130-3490

Classifications MeSH