Extraction of acceptor concentration map from EBIC experiments.
CMOS
Doping concentration
Electron Beam Induced Current
Image sensor
Scanning Electron Microscopy (SEM)
Simulation
Journal
Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702
Informations de publication
Date de publication:
Sep 2021
Sep 2021
Historique:
received:
21
01
2021
revised:
27
04
2021
accepted:
09
06
2021
pubmed:
4
7
2021
medline:
4
7
2021
entrez:
3
7
2021
Statut:
ppublish
Résumé
Controlling two dimensional doping distributions is an important benefit in order to check processed substrates or specific devices. To achieve this purpose, a new methodology is proposed in order to obtain qualitative maps of acceptor concentration from one EBIC image. Analytical models are used to help in defining the best experimental condition and to check the validity of the approach, and a TCAD simulation is performed on a realistic structure and shows promising results. Then, a measurement is carried out on a device and the epitaxy gradient is clearly visible, as well as the presence of Pwell layers.
Identifiants
pubmed: 34217097
pii: S0304-3991(21)00123-6
doi: 10.1016/j.ultramic.2021.113339
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
113339Informations de copyright
Copyright © 2021 Elsevier B.V. All rights reserved.