Surface Magnetism in Pristine α Rhombohedral Boron and Intersurface Exchange Coupling Mechanism of Boron Icosahedra.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
29 Jul 2021
Historique:
pubmed: 17 7 2021
medline: 17 7 2021
entrez: 16 7 2021
Statut: ppublish

Résumé

We report intrinsic surface magnetism in pristine α rhombohedral boron (α-boron) using first-principles calculations. Semiconducting α-boron has been cleaved along the (001), (102̅), and (101) planes to produce icosahedral-based non-van der Waals face-boron, t-face-boron, and edge-boron structures, respectively. Face-boron is found to be metallic, while t-face-boron and edge-boron show semiconducting features. In particular, edge-boron exhibits layer-dependent magnetism with a transition from an overall antiferromagnetic (AFM) state with AFM surfaces to either an AFM or a ferromagnetic (FM) state with FM surfaces as the number of layers increases. The magnetism in edge-boron arises from the spin polarization of boron atoms with unsaturated bonds at the edge sites in the upper and lower surfaces, and magnetic exchange coupling can be mediated via adjacent boron icosahedra by up to a maximum of 8.4 Å. These findings deepen our understanding of icosahedral-based boron and boron-rich materials, which may be useful in potential spintronics applications.

Identifiants

pubmed: 34270247
doi: 10.1021/acs.jpclett.1c01860
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6812-6817

Auteurs

Xiao Yu (X)

School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.

Tiege Zhou (T)

Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China.

Yuanchun Zhao (Y)

State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Feng Lu (F)

Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China.

Xiaoming Zhang (X)

School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.

Guodong Liu (G)

School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.

Huiyang Gou (H)

Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China.

Eva Zurek (E)

Department of Chemistry, State University of New York at Buffalo, Buffalo, New York 14260, United States.

Xiaoguang Luo (X)

Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China.

Classifications MeSH