Environment-induced overheating phenomena in Au-nanowire based Josephson junctions.

Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
27 Jul 2021
Historique:
received: 25 03 2021
accepted: 14 07 2021
entrez: 28 7 2021
pubmed: 29 7 2021
medline: 29 7 2021
Statut: epublish

Résumé

Unlike conventional planar Josephson junctions, nanowire-based devices have a bridge geometry with a peculiar coupling to environment that can favor non-equilibrium electronic phenomena. Here we measure the influence of the electron bath overheating on critical current of several bridge-like junctions built on a single Au-nanowire. Using the Usadel theory and applying the two-fluid description for the normal and superconducting components of the flowing currents, we reveal and explain the mutual influence of the neighbouring junctions on their characteristics through various processes of the electron gas overheating. Our results provide additional ways to control nanowire-based superconducting devices.

Identifiants

DOI: 10.1038/s41598-021-94720-5 PMID: 34315993 PMC: PMC8316400
pubmed: 34315993
doi: 10.1038/s41598-021-94720-5
pii: 10.1038/s41598-021-94720-5
pmc: PMC8316400
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

15274

Subventions

Organisme : RFBR
ID : 19-02-00981
Organisme : RSF
ID : 20-69-47013
Organisme : COST Action
ID : CA16218

Commentaires et corrections

Type : ErratumIn

Informations de copyright

© 2021. The Author(s).

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Auteurs

O V Skryabina (OV)

Institute of Solid State Physics RAS, Chernogolovka, Russia, 142432. oskrya@gmail.com.
Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700. oskrya@gmail.com.
Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russia, 119991. oskrya@gmail.com.

S V Bakurskiy (SV)

Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russia, 119991.
Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia, 127055.

A G Shishkin (AG)

Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia, 127055.

A A Klimenko (AA)

Department of Materials Science, MSU, Moscow, Russia, 119991.
Institute of Nanotechnology of Microelectronics RAS, Moscow, Russia, 119991.

K S Napolskii (KS)

Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
Department of Materials Science, MSU, Moscow, Russia, 119991.
Department of Chemistry, MSU, Moscow, Russia, 119991.

N V Klenov (NV)

Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russia, 119991.
Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia, 127055.

I I Soloviev (II)

Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russia, 119991.
Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia, 127055.

V V Ryazanov (VV)

Institute of Solid State Physics RAS, Chernogolovka, Russia, 142432.
Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.

A A Golubov (AA)

Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
Faculty of Science and Technology, MESA+ Institute of Nanotechnology, 7500 AE, Enschede, The Netherlands.

D Roditchev (D)

Laboratoire de Physique et d'Etude des Materiaux, LPEM, UMR-8213, ESPCI-Paris, PSL, CNRS, Sorbonne University, 75005, Paris, France.

M Yu Kupriyanov (MY)

Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russia, 119991.

V S Stolyarov (VS)

Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia, 127055.

Classifications MeSH