Crystalline defect analysis in epitaxial Si
Crystalline defect analysis
ECCI information depth
Electron channeling contrast imaging
Scanning transmission electron microscopy in SEM
Site-specific FIB sample preparation
Journal
Micron (Oxford, England : 1993)
ISSN: 1878-4291
Titre abrégé: Micron
Pays: England
ID NLM: 9312850
Informations de publication
Date de publication:
Nov 2021
Nov 2021
Historique:
received:
14
04
2021
revised:
16
07
2021
accepted:
19
07
2021
pubmed:
4
8
2021
medline:
4
8
2021
entrez:
3
8
2021
Statut:
ppublish
Résumé
Electron channeling contrast imaging (ECCI) is a powerful technique to characterize the structural defects present in a sample and to obtain relevant statistics about their density. Using ECCI, such defects can only be properly visualized, if the information depth is larger than the depth at which defects reside. Furthermore, a systematic correlation of the features observed by ECCI with the defect nature, confirmed by a complementary technique, is required for defect analysis. Therefore, we present in this paper a site-specific ECCI-scanning transmission electron microscopy (STEM) inspection. Its value is illustrated by the application to a partially relaxed epitaxial Si
Identifiants
pubmed: 34343885
pii: S0968-4328(21)00114-1
doi: 10.1016/j.micron.2021.103123
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
103123Informations de copyright
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